Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.4793264
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability;Semiconductor Science and Technology;2021-10-19
2. Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study;Applied Physics A;2020-07-31
3. Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices;Journal of Materials Science;2020-03-28
4. Erratum: “Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)” [Appl. Phys. Lett. 104, 012906 (2014)];Applied Physics Letters;2015-04-06
5. Superior dielectric properties for template assisted grown (100) oriented Gd2O3thin films on Si(100);Applied Physics Letters;2014-01-06
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