Bias voltage diagnostics during oxide etch in Drytek 384T
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.578455
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Origin of electrical signals for plasma etching end point detection: Comparison of end point signals and electron density;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-09
2. Binary Cr etch process control directed at the 45-nm node;SPIE Proceedings;2006-05-04
3. Sensitive End-Point Detection for Dielectric Etch;Journal of The Electrochemical Society;2001
4. Plasma Etching Endpointing by Monitoring Radio‐Frequency Power Systems with an Artificial Neural Network;Journal of The Electrochemical Society;1996-06-01
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