Mechanism of reducing line edge roughness in ArF photoresist by using CF[sub 3]I plasma-Reference-Cited by-同舟云学术

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Mechanism of reducing line edge roughness in ArF photoresist by using CF[sub 3]I plasma

Published:2009 Issue:5 Volume:27 Page:2117
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Soda Eiichi,Kondo Seiichi,Saito Shuichi,Koyama Koji,Jinnai Butsurin,Samukawa Seiji

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoelectron spectroscopic study of I−·ICF3: a frontside attack SN2 pre-reaction complex;Physical Chemistry Chemical Physics;2019

2. Sidewall roughness in nanolithography: origins, metrology and device effects;Nanolithography;2014

3. Three-dimensional geometrical modeling of plasma transfer effects on line edge roughness: comparison with experiments and rules of thumb;Journal of Micro/Nanolithography, MEMS, and MOEMS;2013-11-12

4. Novel ArF photoresist polymer to suppress the formation of roughness in plasma etching processes;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-11

5. Toward an integrated line edge roughness understanding: metrology, characterization, and plasma etching transfer;SPIE Proceedings;2013-03-29

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