Removal of chemical–mechanical polishing-induced damage layer in single crystal La[sub 3]Ga[sub 5]SiO[sub 14] by inductively coupled plasma etching
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Published:2005
Issue:5
Volume:23
Page:2236
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Cho Hyun,Pearton S. J.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
3 articles.
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