InGaAs/AlGaAs intersubband transition structures grown on InAlAs buffer layers on GaAs substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

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InGaAs/AlGaAs intersubband transition structures grown on InAlAs buffer layers on GaAs substrates by molecular beam epitaxy

Published:2000 Issue:3 Volume:18 Page:1614
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Katzer D. S.,Rabinovich W. S.,Beadie G.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photonic valence/conduction subbands in optically generated photonic quantum wells: Tunable optical-delay line application;Physical Review B;2009-07-21

2. InGaAs/GaAsP/AlGaAs, deep-well, quantum-cascade light-emitting structures grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;2008-04

3. Functional photonic band gap structures based on electromagnetically induced transparency in the conduction intersubband transitions of quantum wells;Active Photonic Crystals;2007-09-13

4. Tunable Infrared Semiconductor Lasers Based on Electromagnetically Induced Optical Defects;IEEE Journal of Selected Topics in Quantum Electronics;2007

5. Optical switching of one-dimensional photonic band gaps and coherent generation of dark and bright optical lattices in quantum wells;Physical Review B;2006-01-04

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