Substrate temperature measurement by absorption-edge spectroscopy during molecular beam epitaxy of narrow-band gap semiconductor films

Author:

de Lyon T. J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fiber optic temperature sensor based on the spectrum analysis detection using a PSD;SPIE Proceedings;2010-11-03

2. MBE Growth of Mercury Cadmium Telluride;Mercury Cadmium Telluride;2010-09-04

3. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010

4. Real-time mass spectroscopy of reflected fluxes during molecular beam epitaxy growth of HgCdTe;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

5. Portable Radiometer: A Novel Technique for in Situ Band Gap Measurements;Applied Spectroscopy;2007-04

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