Schottky barrier heights of single crystal silicides on Si(111)-Reference-Cited by-同舟云学术

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Schottky barrier heights of single crystal silicides on Si(111)

Published:1984 Issue:3 Volume:2 Page:465
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Tung R. T.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 84 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi2 (111)/Si(111) interfaces;Physical Review B;2024-07-10

2. Dependence of the Metal–Insulator–Semiconductor Schottky Barrier Height on Insulator Composition;ACS Applied Electronic Materials;2024-01-18

3. Manifestation of interface-induced effects of two-dimensional MSi2/Si(111) quantum heterostructures: A first principles study;Physica E: Low-dimensional Systems and Nanostructures;2022-08

4. Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07

5. Multimode Silicon Nanowire Transistors;Nano Letters;2014-10-15

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