Current relaxation analysis in AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Current relaxation analysis in AlGaN/GaN high electron mobility transistors

Published:2017-01 Issue:1 Volume:35 Page:011207
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Polyakov Alexander Y.,Smirnov N. B.,Shchemerov Ivan V.,Lee In-Hwan¹,Jang Taehoon²,Dorofeev Alexey A.,Gladysheva Nadezhda B.,Kondratyev Eugene S.,Turusova Yulia A.,Zinovyev Roman A.,Turutin A. V.,Ren Fan³,Pearton S. J.⁴

Affiliation:

1. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, South Korea

2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, South Korea

3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.4973973

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