Deposition of Hf–silicate gate dielectric on Si[sub x]Ge[sub 1−x](100): Detection of interfacial layer growth-Reference-Cited by-同舟云学术

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Deposition of Hf–silicate gate dielectric on Si[sub x]Ge[sub 1−x](100): Detection of interfacial layer growth

Published:2004 Issue:3 Volume:22 Page:616
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:J. Vac. Sci. Technol. A

Author:

Addepalli S.,Sivasubramani P.,El-Bouanani M.,Kim M. J.,Gnade B. E.,Wallace R. M.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. UV Engineering of High-k Thin Films;High-k Gate Dielectrics for CMOS Technology;2012-08-23

2. Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices;Microelectronic Engineering;2008-08

3. Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors;Japanese Journal of Applied Physics;2008-04-25

4. Hf1−xSixOy dielectric films deposited by UV-photo-induced chemical vapour deposition (UV-CVD);Applied Surface Science;2007-07

5. The electrical properties and stability of the hafnium silicate/Si0.8Ge0.2(100) interface;Journal of Electronic Materials;2004-09

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