Author:
Kim Byung-Jae,Ahn Shihyun,Hwang Ya-Hsi,Ren Fan,Pearton Stephen J.,Kim Jihyun,Zhang Ming-Lan
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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1. III-Nitride lateral transistor power switch;III-Nitride Electronic Devices;2019
2. Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07