Reactive ion etching of crystalline silicon using NF3 diluted with H2-Reference-Cited by-同舟云学术

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Reactive ion etching of crystalline silicon using NF3 diluted with H2

Published:1993-07 Issue:4 Volume:11 Page:1156-1160
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Sidhwa A. J.,Goh F. C.,Naseem H. A.,Brown W. D.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578458

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vacuum ultraviolet-absorption spectroscopy and delocalized plasma-induced emission used for the species detection in a down-stream soft-etch plasma reactor;Journal of Vacuum Science & Technology A;2020-07

2. Selective dry etching of silicon containing anti-reflective coating;Advanced Etch Technology for Nanopatterning VII;2018-03-20

3. Electron transport parameters in NF3;Journal of Physics D: Applied Physics;2014-02-26

4. Rf discharge dissociative mode in NF3and SiH4;Journal of Physics D: Applied Physics;2007-10-19

5. Contact Resistance Reduction Using Vacuum Loadlock System and Plasma Dry Cleaning;Japanese Journal of Applied Physics;2005-06-10

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