Summary Abstract: High conductance and low persistent photoconductivity in Ga0.47In0.53As/Al0.48In0.52As modulation-doped structures with Pinchoff capabilities
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Published:1985-03
Issue:2
Volume:3
Page:655
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
6 articles.
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