Extreme-low k porous pSiCOH dielectrics prepared by PECVD-Reference-Cited by-同舟云学术

Extreme-low k porous pSiCOH dielectrics prepared by PECVD

Published:2018-01 Issue:1 Volume:36 Page:012202
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

You Han¹,Mennell Petra²,Shoudy Matthew,Sil Devika,Dorman Donald,Cohen Stephan,Liniger Eric,Shaw Thomas,Leo Tsong-Lin³,Canaperi Donald⁴,Raymond Mark¹,Madan Anita²,Grill Alfred⁵

Affiliation:

1. GLOBALFOUNDRIES Inc., Albany, New York 12203

2. GLOBALFOUNDRIES Inc., Hopewell Junction, New York 12533

3. IBM Research, IBM Corp., Hopewell Junction, New York 12533

4. IBM Research, IBM Corp., 257 Fuller Road, Albany, New York 12203

5. IBM T.J. Watson Research Center, Yorktown Heights, New York 10598

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5007177

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