Planar channeling of ions in compound semiconductor superlattices-Reference-Cited by-同舟云学术

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Planar channeling of ions in compound semiconductor superlattices

Published:1982-07 Issue:2 Volume:21 Page:384-385
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Barrett John H.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571786

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE Surface and Interface Studies;The Technology and Physics of Molecular Beam Epitaxy;1985

2. Planar dechanneling studies of strained-layer superlattice structures;Nuclear Instruments and Methods in Physics Research;1983-12

3. Ion dechanneling due to lattice strains in semiconductor superlattices;Physical Review B;1983-09-01

4. Ion Channeling in Elastically Strained Superlattices;MRS Proceedings;1983

5. Channeling measurements of lattice disorder at the GaAs–InAs(100) heterojunction;Journal of Vacuum Science and Technology;1982-07

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