Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.2049303
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Plasma Etching of the Deep Hole Structure in Silicon with the Mixed Gas of SF6, HBr and O2;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26
2. Numerical investigation of HBr/He transformer coupled plasmas used for silicon etching;Journal of Physics D: Applied Physics;2014-12-10
3. Plasma cryogenic etching of silicon: from the early days to today's advanced technologies;Journal of Physics D: Applied Physics;2014-03-06
4. Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma;Japanese Journal of Applied Physics;2013-11-01
5. Fabrication of high-density Si and SixGe1−x nanowire arrays based on the single step plasma etching process;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-07
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