Arsenic cap layer desorption and the formation of GaAs(001)c(4×4) surfaces-Reference-Cited by-同舟云学术

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Arsenic cap layer desorption and the formation of GaAs(001)c(4×4) surfaces

Published:1995-09 Issue:5 Volume:13 Page:2041
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Karpov I.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface studies of physicochemical properties of As films on GaN(0001);Applied Surface Science;2019-11

2. GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell;Nanoscale;2016

3. Interface Between Atomic Layer Deposition Ta2O5 Films and GaAs(100) Surfaces;The Journal of Physical Chemistry C;2012-04-16

4. Comment on: “As 3d core level studies of (GaMn)As annealed under As capping” by I. Ulfat, J. Adell, J. Sadowski, L. Ilver, J. Kanski, Surface Sci. 604 (2010), 125.;Surface Science;2010-10

5. Growth and Interface Evolution of HfO[sub 2] Films on GaAs(100) Surfaces;Journal of The Electrochemical Society;2010

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