Some properties of a high density electron‐hole plasma in Hg1−xCdxTe
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.571721
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Comparison and competition between MCT and QW structure material for use in IR detectors;Microelectronics Journal;1994-11
2. Generation of 1-ps infrared pulses at 106 μm by use of low-temperature-grown GaAs as an optical semiconductor switch;Optics Letters;1994-06-15
3. Infrared photoluminescence in p-Hg1−xCdxTe (0.23 ⩽ × ⩽ 1) in magnetic fields up to 6T;Solid State Communications;1990-12
4. Infrared Photoluminescence in Narrow-Gap Semiconductors;physica status solidi (a);1990-11-16
5. Picosecond Modulated Reflectance in Semiconductors;Semiconductors Probed by Ultrafast Laser Spectroscopy;1984
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