Affiliation:
1. Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology 1 , Beijing 100081, China
2. Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology 2 , Beijing 100081, China
Abstract
Graphene analogs composed of Bi, Sb, and Sn, respectively, are predicted to be great candidates to realize the quantum spin Hall effect at high temperatures and have attracted intensive research interest in recent years. However, their structural and electronic properties are greatly affected by substrates. Here, we epitaxially grow Bi, Sb, and Sn overlayers on various substrates. We observed the formation of Au–Bi alloy on Au(111) substrates, while α-Bi was formed on the TaIrTe4, TiSe2and Cr2Ge2Te6 substrates. Large-scale thin films of α-Bi, α-Sb and β-Sn can be prepared on the TiSe2 substrates due to the high quality of the substrates with very few defects. The lattice of the Sb films is slightly compressed on the TiSe2 substrates, due to the interfacial interaction. α-Sn transitions to β-Sn on the TiSe2 substrates with increasing Sn coverages. Our work is very helpful for tuning the structural and electronic properties of epitaxial Bi, Sb, and Sn films via proper substrates.
Funder
Natural Science Foundation of Beijing Municipality
National Natural Science Foundation of China
National Key Research and Development Program of China
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics