Effect of orientation on the Schottky barrier height of thermodynamically stable epitaxial metal/GaAs structures-Reference-Cited by-同舟云学术

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Effect of orientation on the Schottky barrier height of thermodynamically stable epitaxial metal/GaAs structures

Published:1992-07 Issue:4 Volume:10 Page:1946-1953
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Palmstro/m C. J.,Cheeks T. L.,Gilchrist H. L.,Zhu J. G.,Carter C. B.,Wilkens B. J.,Martin R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578120

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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