Partial pressure of TiCl4 in CVD of TiN-Reference-Cited by-同舟云学术

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Partial pressure of TiCl4 in CVD of TiN

Published:1974-07 Issue:4 Volume:11 Page:715-718
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Peterson John R.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1312741

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition;Superconductor Science and Technology;2018-04-13

2. Effect of deposition parameters on TiAlN coating using pulsed DC CFUBMS;Surface Engineering;2013-05

3. *Investigation on the formation of titanium nitride thin films on 304 type stainless steel using plasma focus device;Journal of Theoretical and Applied Physics;2012

4. Increasing of Hardness of Titanium Using Energetic Nitrogen Ions from Sahand as a Filippov Type Plasma Focus Facility;Journal of Fusion Energy;2011-06-03

5. Water vapor-controlled thermal plasma chemical vapor deposition of double-layered TiN/PSZ coatings on Si and WC-Co substrates;Materials Science and Engineering: B;2010-08

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