Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates-Reference-Cited by-同舟云学术

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

Published:2016-09 Issue:5 Volume:34 Page:051208
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Ren Fan¹,Pearton Stephen J.²,Ahn Shihyun,Lin Yi-Hsuan,Machuca Francisco,Weiss Robert,Welsh Alex,McCartney Martha R.,Smith David J.,Kravchenko Ivan I.³

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

2. Department of Materials Science Engineering, University of Florida, Gainesville, Florida 32611

3. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830

Funder

Air Force Research Laboratory (AFRL)

Air Force Office of Scientific Research (AFOSR)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.4963064

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