Effectiveness of dilute H2 plasmas in removing boron from Si after etching of HfO2 films in BCl3 plasmas
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.2134708
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SiCl4/Cl2 plasmas: A new chemistry to etch high-k materials selectively to Si-based materials;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-03
2. SELECTIVE REMOVAL OF HIGH-KGATE DIELECTRICS;Chemical Engineering Communications;2009-08-31
3. Plasma etching of Hf-based high-k thin films. Part II. Ion-enhanced surface reaction mechanisms;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-03
4. Selective Etching of High-kDielectric HfO2Films over Si in BCl3-Containing Plasmas without rf Biasing;Applied Physics Express;2009-01-09
5. Dilute hydrogen plasma cleaning of boron from silicon after etching of HfO2 films in BCl3 plasmas: Substrate temperature dependence;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-01
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