Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma-Reference-Cited by-同舟云学术

Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma

Published:2019-11 Issue:6 Volume:37 Page:061206
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Panduranga Parashara¹,Abdou Aly¹,Ren Zhong²,Pedersen Rasmus H.²,Nezhad Maziar P.¹^ORCID

Affiliation:

1. School of Computer Science and Electronic Engineering, Bangor University, Bangor LL57 2DG, United Kingdom

2. Oxford Instruments Plasma Technology, Bristol BS49 4AP, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Higher Education Funding Council for Wales

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5116021

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