Magnetron reactive ion etching of AlN and InN in BCl3 plasmas-Reference-Cited by-同舟云学术

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Magnetron reactive ion etching of AlN and InN in BCl3 plasmas

Published:1995-05 Issue:3 Volume:13 Page:724-726
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

McLane G. F.,Casas L.,Lareau R. T.,Eckart D. W.,Vartuli C. B.,Pearton S. J.,Abernathy C. R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579815

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-100 nm radius of curvature wide-band gap III-nitride vacuum microelectronic field emitter structures created by inductively coupled plasma etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07

2. Photoenhanced reactive ion etching of III–V nitrides in BCl3/Cl2/Ar/N2 plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07

3. Photo-Assisted RIE of GaN in BCl3/Cl2/N2;MRS Proceedings;1999

4. Magnetron reactive ion etching of group III‐nitride ternary alloys;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-05

5. Plasma Chemistries for Dry Etching GaN, AIN, InGaN and InAIN;MRS Proceedings;1996

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