Characterization of a new reactor for remote plasma chemical vapor deposition
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.575796
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Barium and titanium aryl oxides as precursors for the preparation of thin-film oxides. The effect of bombardment by O2+;J. Chem. Soc., Dalton Trans.;1995
2. Ion beam induced chemical vapor deposition procedure for the preparation of oxide thin films. I. Preparation and characterization of TiO2 thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-09
3. Plasma-Enhanced Chemical Vapor Deposition;Surface Engineering;1994
4. Organometallic vapor‐phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region;Applied Physics Letters;1992-06-22
5. Plasma-Enhanced Chemical Vapor Deposition;Thin Film Processes;1991
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