SiO2/InP interface formation: Thermodynamic considerations
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.570563
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition;Journal of Electronic Materials;2002-12
2. Active equivalent network for states at the Al/InPO4 interface;Solid-State Electronics;1999-02
3. Indium phosphide MISiFET processing using wet chemical surface pre-treatments and evaporated thin silicon interlayers;Electronics Letters;1994-02-17
4. Spin-on silicon dioxide films on indium antimony;Thin Solid Films;1993-01
5. Annealing Behavior of HF-Treated GaAs Capped with SiO2Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition;Japanese Journal of Applied Physics;1992-12-15
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