Molecular-beam epitaxy growth and uniformity test of modulation-doped Al0.3Ga0.7As/GaAs heterostructure on 4-in. diameter GaAs(100)
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Published:1991-09
Issue:5
Volume:9
Page:2548
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
1 articles.
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1. Flux masking and thickness uniformity in molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11