Low resistivity ohmic contacts to moderately doped n‐GaAs with low‐temperature processing-Reference-Cited by-同舟云学术

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Low resistivity ohmic contacts to moderately doped n‐GaAs with low‐temperature processing

Published:1995-05 Issue:3 Volume:13 Page:758-762
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Lovejoy Michael L.,Howard Arnold J.,Zavadil Kevin R.,Rieger Dennis J.,Shul Randy J.,Barnes Peter A.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579822

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contact Problems in GaAs-based Solar Cells;Acta Polytechnica Hungarica;2018

2. Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET;IEEE Transactions on Electron Devices;2015-12

3. Semiconductors, Compound;Kirk-Othmer Encyclopedia of Chemical Technology;2006-09-15

4. PdGe-Based Ohmic Contact on n-GaAs with Highly and Poorly Doped Layers;Japanese Journal of Applied Physics;2000-05-15

5. Performance of Pd/Ge/Au/Pd/Au ohmic contacts and its application to GaAs metal-semiconductor field-effect transistors;Solid-State Electronics;1999-10

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