Cooling power of field emission from the n-type silicon semiconductor-Reference-Cited by-同舟云学术

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Cooling power of field emission from the n-type silicon semiconductor

Published:2010-03 Issue:2 Volume:28 Page:C2A19-C2A23
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Chung M. S.,Yoon B.-G.,Mayer A.,Weis B. L.,Miskovsky N. M.,Cutler P. H.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3292597

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonant Tunneling Induced Enhancement of Electron Field Emission by Ultra-Thin Coatings;Scientific Reports;2019-05-02

2. Carrier concentration-dependence of the Nottingham cooling of an n-type silicon semiconductor;Journal of the Korean Physical Society;2015-11

3. Study of molar ratio on the characteristics of metal–organic decomposed LaxCe1−xOz film as a metal reactive oxide on Si substrate;Journal of Alloys and Compounds;2013-12

4. Theoretical analysis of field emission cooling of N-type PbTe;Journal of the Korean Physical Society;2012-05

5. Field emission cooling of thermoelectric semiconductor PbTe;Applied Physics Letters;2011-06-13

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