Effect of film thickness on the ferroelectric properties of Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] thin films for nano-data storage applications-Reference-Cited by-同舟云学术

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Effect of film thickness on the ferroelectric properties of Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] thin films for nano-data storage applications

Published:2005 Issue:5 Volume:23 Page:1901
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lee Woo-Sung,Ahn Kyoung-Chan,Yoon Soon-Gil,Kim Chang Soo

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studies on the effect of integration of metal nanoclusters on the electrical and ferroelectric properties of barium titanate thin film;Ferroelectrics;2018-09-10

2. Polarization induced self-doping in epitaxial Pb(Zr0.20Ti0.80)O3 thin films;Scientific Reports;2015-10-08

3. Polarization-Control of the Potential Barrier at the Electrode Interfaces in Epitaxial Ferroelectric Thin Films;ACS Applied Materials & Interfaces;2014-01-29

4. Microstructures and Electric Properties of Highly (111)-Oriented Nb-Doped Pb(Zr0.2,Ti0.8)O3 Films with Pb0.8La0.1Ca0.1Ti0.975O3 Seed Layer;Journal of the American Ceramic Society;2011-01-19

5. Epitaxial SrRuO3 thin films deposited on SrO buffered-Si(001) substrates for ferroelectric Pb(Zr0.2Ti0.8)O3 thin films;Metals and Materials International;2009-02

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