Reproducible growth and application of AlAs/GaAs double barrier resonant tunneling diodes-Reference-Cited by-同舟云学术

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Reproducible growth and application of AlAs/GaAs double barrier resonant tunneling diodes

Published:1993-05 Issue:3 Volume:11 Page:965
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Mars D. E.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The engineering of quantum–dot devices;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;2002-12-19

2. New statistical analysis of tunnel diode barriers;Semiconductor Science and Technology;2000-01-01

3. Microwave tunnel diodes are not yet manufacturable;Superlattices and Microstructures;1998-10

4. Multi-stage annealing of defects in ion-implanted double-barrier diodes;Semiconductor Science and Technology;1997-10-01

5. MBE growth of highly reproducible VCSELs;Journal of Crystal Growth;1997-05

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