Predicting synergy in atomic layer etching-Reference-Cited by-同舟云学术

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Predicting synergy in atomic layer etching

Published:2017-09 Issue:5 Volume:35 Page:05C302
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kanarik Keren J.,Tan Samantha,Yang Wenbing,Kim Taeseung,Lill Thorsten,Kabansky Alexander,Hudson Eric A.,Ohba Tomihito,Nojiri Kazuo,Yu Jengyi,Wise Rich,Berry Ivan L.,Pan Yang,Marks Jeffrey,Gottscho Richard A.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4979019

Cited by 96 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma atomic layer etching of ruthenium by oxygen adsorption-removal cyclic process;Applied Surface Science;2024-10

2. Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications;Japanese Journal of Applied Physics;2024-08-01

3. A transient site balance model for atomic layer etching;Plasma Sources Science and Technology;2024-07-01

4. Mechanism study of H2-plasma assisted Si3N4 layered etch;Journal of Vacuum Science & Technology A;2024-06-11

5. Selective Atomic Layer Etching for Silicon Device Fabrication;2024 International Conference on Integrated Circuits, Communication, and Computing Systems (ICIC3S);2024-06-08

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