Moderately in situ phosphorus-doped polycrystalline silicon by single wafer reduced pressure chemical vapor deposition
-
Published:1998-05
Issue:3
Volume:16
Page:1082
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:
-
Short-container-title:J. Vac. Sci. Technol. B
Author:
Violette Katherine E.
Publisher
American Vacuum Society
Subject
General Engineering