1.3 μm Ga[sub 0.11]In[sub 0.89]As[sub 0.24]P[sub 0.76]∕Ga[sub 0.27]In[sub 0.73]As[sub 0.67]P[sub 0.33] compressive-strain multiple quantum well with n-type modulation-doped GaInP intermediate-barrier laser diodes
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Published:2007
Issue:4
Volume:25
Page:1382
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ISSN:1071-1023
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics