Bromine ion-beam-assisted etching of InP and GaAs-Reference-Cited by-同舟云学术

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Bromine ion-beam-assisted etching of InP and GaAs

Published:1998-05 Issue:3 Volume:16 Page:1012
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Rossler J. M.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAs Quantum Dot Lasers With Dry Etched Facet by Br-Ion Beam-Assisted Etching;IEEE Photonics Technology Letters;2016-09-15

2. Inductively Coupled Plasma Etching of InP with HBr∕O[sub 2] Chemistry;Journal of The Electrochemical Society;2008

3. Anisotropic and Smooth Inductively Coupled Plasma Etching of III-V Laser Waveguides Using HBr-O[sub 2] Chemistry;Journal of The Electrochemical Society;2008

4. Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05

5. 2D InP photonic crystal fabrication process development;SPIE Proceedings;2006-08-31

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