Electrical evaluation of InP surface damage caused by reactive ion etching with a mixture of methane (CH4) or ethane (C2H6) and hydrogen (H2)-Reference-Cited by-同舟云学术

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Electrical evaluation of InP surface damage caused by reactive ion etching with a mixture of methane (CH4) or ethane (C2H6) and hydrogen (H2)

Published:1997-01 Issue:1 Volume:15 Page:103
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Yamamoto N.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and electrical evaluation methods of plasma-induced damage in InP substrates;Japanese Journal of Applied Physics;2024-06-03

2. Anomalous Enhancement of In-Diffusion of Plasma-Induced Defects in GaN upon Ultraviolet-Light Irradiation;Japanese Journal of Applied Physics;2013-08-01

3. Dependence of selectivity on plasma conditions in selective etching in submicrometer pitch grating on InP surface by CH4/H2 reactive ion etching;Journal of Applied Physics;2011-04

4. Selective Etching and Polymer Deposition on InP Surface in CH4/H2Reactive Ion Etching Using A New Mask Structure for Application to Submicrometer Pitch Grating;Applied Physics Express;2010-05-21

5. Selective etching and polymer deposition on InP surface in reactive ion etching with a mixture of methane and hydrogen;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

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