Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy
Author:
Affiliation:
1. Institute of Rare Metals, B. Tolmachevsky 5, Moscow 119017, Russia
2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida
Funder
NSF
USARO
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy;Semiconductors;2022-03
2. Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid;Applied Surface Science;2014-03
3. Semipolar GaN grown on foreign substrates: a review;Semiconductor Science and Technology;2012-01-19
4. The structural and optical properties of selectively grown a-plane GaN with LT-GaN and HT-AlN buffer layers;Journal of Crystal Growth;2011-01
5. a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-09
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