Atomic layer etching of SiO2 for surface cleaning using ammonium fluorosilicate with CF4/NH3 plasma
Author:
Affiliation:
1. School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea
2. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, South Korea
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Korea Institute of Energy Technology Evaluation and Planning
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.5132986
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atomic layer etching of SiO2 using sequential exposures of Al(CH3)3 and H2/SF6 plasma;Journal of Vacuum Science & Technology A;2024-09-01
2. Atomic layer etching of SiCO films with surface modification by O2 and CF4/NH3/Ar plasmas and desorption by IR annealing;Journal of Vacuum Science & Technology A;2024-06-07
3. Etching selectivity of SiO2 to SiN using HF and methanol at higher pressures up to 900 Pa;Japanese Journal of Applied Physics;2024-06-03
4. Total cross section measurements of electron scattering from NH3 in the intermediate-energy region;The European Physical Journal D;2024-05
5. Plasma atomic layer etching of SiO2 with a low global warming potential fluorocarbon precursor (C6F6);Journal of Vacuum Science & Technology A;2024-04-16
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