Spatial separation of carriers in InAs–GaSb superlattices-Reference-Cited by-同舟云学术

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Spatial separation of carriers in InAs–GaSb superlattices

Published:1981-09 Issue:3 Volume:19 Page:589-591
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Chang L. L.,Sai‐Halasz G. A.,Esaki L.,Aggarwal R. L.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571134

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved tight-binding parameters of III–V semiconductor alloys and their application to type-II superlattices;Japanese Journal of Applied Physics;2022-01-31

2. Large hh-lh splitting energy for InAs/AlSb/GaSb based N-structure photodetectors;Journal of Applied Physics;2018-01-14

3. Advances in mid-infrared detection and imaging: a key issues review;Reports on Progress in Physics;2014-08-01

4. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations;Journal of Applied Physics;2012-02

5. Full-band envelope-function approach for type-II broken-gap superlattices;Physical Review B;2009-07-10

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