Investigation of ultrathin SiO[sub 2] film thickness variations by ballistic electron emission microscopy-Reference-Cited by-同舟云学术

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Investigation of ultrathin SiO[sub 2] film thickness variations by ballistic electron emission microscopy

Published:1998-07 Issue:4 Volume:16 Page:2302
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kaczer B.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependence of Si–SiO2 Barrier Height and Tunneling Current in Ultrathin MOS Structure;Journal of Computational and Theoretical Nanoscience;2012-07-01

2. Effect of surface contamination on electron tunneling in the high bias range;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-07

3. Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures;Surface Science Reports;2009-05-01

4. Hot electron transport in Au–HfO2–SiO2–Si structures studied by ballistic electron emission spectroscopy;Applied Physics Letters;2007-04-02

5. BEEM studies on metal highK-dielectric HfO2interfaces;Journal of Physics: Conference Series;2007-04-01

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