Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 68 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes;Transactions on Electrical and Electronic Materials;2024-02-03
2. Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation;Energies;2023-07-18
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4. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes;2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD);2020-09
5. Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates;Journal of Applied Physics;2020-06-21
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