Controlled p‐type impurity doping of Hg1−xCdxTe during growth by molecular‐beam epitaxy-Reference-Cited by-同舟云学术

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Controlled p‐type impurity doping of Hg1−xCdxTe during growth by molecular‐beam epitaxy

Published:1988-07 Issue:4 Volume:6 Page:2826-2829
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Wroge M. L.,Peterman D. J.,Morris B. J.,Leopold D. J.,Broerman J. G.,Feldman B. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.575609

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Low-temperature activation of As in Hg1−xCdxTe(211) grown on Si by molecular beam epitaxy;Journal of Electronic Materials;2002-07

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5. Can percolation control doping, diffusion and phase segregation in (Hg,Cd)Te?;Journal of Crystal Growth;1999-02

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