Thin film transistors with anodic gate dielectrics and chemical bath deposited active layers-Reference-Cited by-同舟云学术

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Thin film transistors with anodic gate dielectrics and chemical bath deposited active layers

Published:2002-07 Issue:4 Volume:20 Page:1365-1368
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Gan Feng Yuan,Shih Ishiang

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1484095

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Voltage a-IGZO Thin Film Transistor Using Tantalum Oxide by Thermal Oxidation;Electronic Materials Letters;2023-04-19

2. Low Voltage a-IGZO Thin Film Transistor Using Tantalum Oxide by Thermal Oxidation;2022-08-17

3. Negative differential resistance as effect of Zn doping of chemically processed CdS thin film transistors;Materials Letters;2017-04

4. Nanoporous WO3 from anodized RF sputtered tungsten thin films;Electrochemistry Communications;2009-04

5. Investigate the Reacting Flux of Chemical Bath Deposition by a Continuous Flow Microreactor;Electrochemical and Solid-State Letters;2009

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