Characterization of the electrical bias induced strain variation in metal–oxide–semiconductor field effect transistors using x‐ray double crystal topography
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Published:1992-07
Issue:4
Volume:10
Page:1012-1019
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ISSN:0734-2101
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Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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language:en
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Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Author:
Ma David I,Qadri Syed B.,Peckerar Martin C.,McCarthy Daniel
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics