Role of subsurface defects in metal-ZnO(0001) Schottky barrier formation-Reference-Cited by-同舟云学术

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Role of subsurface defects in metal-ZnO(0001) Schottky barrier formation

Published:2007 Issue:4 Volume:25 Page:1405
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Mosbacker H. L.,El Hage S.,Gonzalez M.,Ringel S. A.,Hetzer M.,Look D. C.,Cantwell G.,Zhang J.,Song J. J.,Brillson L. J.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing the Schottky-barrier height by inserting a thin MgO layer between Au and annealed-ZnO;Materials Research Bulletin;2021-12

2. Hybrid inorganic-organic light-emitting heterostructure devices based on ZnO;Optics & Laser Technology;2021-06

3. XRD, SEM, XPS studies of Sb doped ZnO films and electrical properties of its based Schottky diodes;Optik;2018-07

4. The effect of annealing on electrical properties of graphene/ZnO schottky contact;Journal of Materials Science: Materials in Electronics;2018-05-26

5. Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices;Journal of Electronic Materials;2018-03-19

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