Photoemission study of the band bending and chemistry of sodium sulfide on GaAs(100)-Reference-Cited by-同舟云学术

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Photoemission study of the band bending and chemistry of sodium sulfide on GaAs(100)

Published:1989-05 Issue:3 Volume:7 Page:2466-2468
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Spindt C. J.,Besser R. S.,Cao R.,Miyano K.,Helms C. R.,Spicer W. E.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.575878

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface electronic properties of clean and S-terminated InSb(001) and (111)B;Journal of Applied Physics;2008-10-15

2. HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition;Journal of Applied Physics;2008-02

3. Chemical and electrical characterization of Gd2O3∕GaAs interface improved by sulfur passivation;Journal of Applied Physics;2004-11

4. Femtosecond Visible Pump Mid-IR Probe Study on the Effects of Surface Treatments on Ultrafast Photogenerated Carrier Dynamics in n-GaAs (100) Crystals;Chemistry Letters;2004-05

5. XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(100) surface;Vacuum;2002-09

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