Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

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Mutually beneficial doping of tellurium and nitrogen in ZnO films grown by metal-organic chemical vapor deposition

Published:2012-09 Issue:5 Volume:30 Page:051508
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Tang Kun,Gu Shulin,Ye Jiandong,Zhu Shunming,Huang Shimin,Gu Ran,Zhang Rong,Shi Yi,Zheng Youdou

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4738949

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Co-doping: an effective strategy for achieving stable p-type ZnO thin films;Nano Energy;2018-10

2. A review of earth abundant ZnO-based materials for thermoelectric and photovoltaic applications;Oxide-based Materials and Devices IX;2018-02-23

3. Recent progress of the native defects and p-type doping of zinc oxide;Chinese Physics B;2017-04

4. Formation of V Zn -N O acceptors with the assistance of tellurium in nitrogen-doped ZnO films;Journal of Alloys and Compounds;2017-03

5. Experimental investigation on nitrogen related complex acceptors in nitrogen-doped ZnO films;Journal of Alloys and Compounds;2017-03

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