Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes-Reference-Cited by-同舟云学术

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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

Published:2000 Issue:3 Volume:18 Page:1623
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hasenberg T. C.,Day P. S.,Shaw E. M.,Magarrell D. J.,Olesberg J. T.,Yu C.,Boggess Thomas F.,Flátte M. E.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-formation of InAs/InGaAsSb type-II superlattice structures on InP substrates by MBE and their application to mid-infrared LEDs;AIP Advances;2022-08-01

2. Magnetic field dependence optical properties of GaN/AlN multiple quantum wells;Optik - International Journal for Light and Electron Optics;2013-09

3. Effect of the magnetic field on optical properties of GaN/AlN multiple quantum wells;Journal of Luminescence;2013-02

4. Formalism of the transfer matrix and its application to Ⅲ/Ⅴ semicondutor quantum well systems;Acta Physica Sinica;2009

5. Auger recombination in narrow-gap semiconductor superlattices incorporating antimony;Journal of Applied Physics;2002-12-15

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