Defects at the interface of (100)Si with ultrathin layers of SiO[sub x], Al[sub 2]O[sub 3], and ZrO[sub 2] probed by electron spin resonance-Reference-Cited by-同舟云学术

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Defects at the interface of (100)Si with ultrathin layers of SiO[sub x], Al[sub 2]O[sub 3], and ZrO[sub 2] probed by electron spin resonance

Published:2002 Issue:4 Volume:20 Page:1720
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Stesmans A.,Afanas’ev V. V.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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