Inks of dielectric h-BN and semiconducting WS2 for capacitive structures with graphene-Reference-Cited by-同舟云学术

Inks of dielectric h-BN and semiconducting WS2 for capacitive structures with graphene

Published:2020-09 Issue:5 Volume:38 Page:052201
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Desai Jay A.¹²³⁴,Mazumder Sangram²³,Hossain Ridwan Fayaz³,Kaul Anupama B.²³^ORCID

Affiliation:

1. Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, El Paso, Texas 79968

2. Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203

3. Department of Electrical Engineering, and PACCAR Technology Institute, University of North Texas, Denton, Texas 76203

4. Department of Metallurgical and Materials Engineering, VNIT, Nagpur, Maharashtra 440010, India

Funder

ARO

PACCAR Technology Institute

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/6.0000092

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formulation of functional materials for inkjet printing: A pathway towards fully 3D printed electronics;Materials Today Electronics;2023-12

2. Functional Ink Formulation for Printing and Coating of Graphene and Other 2D Materials: Challenges and Solutions;Small Science;2022-10-02

3. Two-dimensional material-based printed photonics: a review;2D Materials;2022-08-17